Quantum hall effect and semimetallic behavior of dual-gated ABA-stacked trilayer graphene

Physical Review X

Volumn 2, Issue 1, 2012, Pages 1-8

  Henriksen, E A ^a   Nandi, D ^a   Eisenstein, J P ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; ELECTRON-HOLE ASYMMETRY; ELECTRONIC TRANSPORT; FIELD-EFFECT DEVICES; HIGH MAGNETIC FIELDS; NUMBER OF LAYERS; SPLITTINGS; STACKING ORDER; TRILAYERS;

ELECTRIC FIELDS; ELECTRONIC STRUCTURE; HALL EFFECT DEVICES; MAGNETIC FIELDS; MONOLAYERS; QUANTUM HALL EFFECT; QUANTUM THEORY;

GRAPHENE;

EID: 84860260153     PISSN: None     EISSN: 21603308     Source Type: Journal    
DOI: 10.1103/PhysRevX.2.011004     Document Type: Article

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