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Physical Review Letters

Volumn 107, Issue 12, 2011, Pages

Integer quantum Hall effect in trilayer graphene

(10) Kumar, A a,b Escoffier, W a,b Poumirol, J M a,b Faugeras, C a,b Arovas, D P c Fogler, M M c Guinea, F d Roche, S e,f Goiran, M a,b Raquet, B a,b

a GRENOBLE HIGH MAGNETIC FIELD LABORATORY (France)

b University of California at San Diego ^* (France)

c UNIVERSITY OF CALIFORNIA (United States)

d INSTITUTO DE CIENCIA DE MATERIALES DE MADRID (Spain)

e UNIVERSITAT AUTÒNOMA DE BARCELONA (Spain)

f INSTITUCIÓ CATALANA DE RECERCA I ESTUDIS AVANÇATS ICREA (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

FILLING FACTOR; HALL RESISTANCE; HALL RESISTIVITY; HOLE CARRIERS; LANDAU LEVELS; QUANTUM HALL EFFECT; STACKING ORDER; THREE-LAYER; TRILAYERS;

GRAPHENE; HALL EFFECT DEVICES; MAGNETIC FIELDS; MONOLAYERS; QUANTUM THEORY;

HALL EFFECT;

EID: 80053072849 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.107.126806 Document Type: Article

Times cited : (106)

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