The eGaN ™ FET-silicon power shoot-out: 2: Drivers, layout

Power Electronics Technology

Volumn 37, Issue 1, 2011, Pages 14-19

  Strydom, Johan ^a  

^a Efficient Power Conversion Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BODY DIODE; DEVICE GATE; DEVICE PARAMETERS; GATE DRIVE CIRCUITS; GATE DRIVES; GATE VOLTAGES; ON-RESISTANCE; POWER MOSFET; REVERSE BIAS; SILICON MOSFET; SWITCHING SPEED; TOTAL RESISTANCE;

MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS;

MESFET DEVICES;

EID: 81855188149     PISSN: 15402800     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (10)

1. http://powerelectronics.com/power-semiconductors/power-mosfets/ fomuseful-method-compare-201009/
2. EPC datasheet of EPC1001. http://epc-co.com/epc/documents/datasheets/ EPC1001-datasheet-final.pdf
3. Fairchild Semiconductor AN-7019, "Limiting Cross-Conduction Current in Synchronous Buck Converter Designs", http://www.fairchildsemi.com/an/AN/ AN-7019.pdf#page=1
4. EPC article, "Fundamentals of Gallium Nitride Power Transistors", http://epc-co.com/epc/documents/product-training/Appnote- GaNfundamentals.pdf
5. International Rectifier, whitepaper, "A New Generation of Wafer Level Packaged HEXFET Devices" http://www.irf.com/technical-info/ whitepaper/pcimflipfet.pdf
6. International Rectifier, http://www.irf.com/technical-info/whitepaper/ thermalpcim02.pdf
7. EPC article, "Using Enhancement Mode GaN-on-Silicon Power Transistors", http://epc-co.com/epc/documents/product-training/Using-GaN- r4.pdf
8. 3M pads http://solutions.3m.com/wps/portal/3M/en-WW/electronics/home/ productsandservices/products/TapesAdhesives/ThermalInterface/
9. Dow Corning Pads: http://www.dowcorning.com/content/etronics/ etronicspadsfilm/
10. Bergquist Pads: http://www.bergquistcompany.com/thermal-materials/gap- pad/pdfs/gap-pad-vosoft/PDS-GP-VOS-12.08-E.pdf