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Volumn 15, Issue 5, 2012, Pages

Fabrication of a homojunction light emitting diode with ZnO-nanorods/ZnO:As-film structure

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TREATMENTS; FILM LAYERS; FILM STRUCTURE; GAAS SUBSTRATES; HOMOJUNCTION; LIGHT EMITTING DIODE (LED); P-TYPE; RECTIFYING BEHAVIORS; ULTRAVIOLET ELECTROLUMINESCENCE; WELL-ALIGNED; WET CHEMICALS; ZNO; ZNO NANOROD;

EID: 84860149249     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/2.020205esl     Document Type: Article
Times cited : (8)

References (17)
  • 9
    • 33947515947 scopus 로고    scopus 로고
    • 10.1088/0957-4484/18/5/055608
    • Sun-Hong Park, Seon-Hyo Kim, and Sang-Wook Han, Nanotechnology, 18, 055608 (2007). 10.1088/0957-4484/18/5/055608
    • (2007) Nanotechnology , vol.18 , pp. 055608
    • Park, S.-H.1    Kim, S.-H.2    Han, S.-W.3
  • 10
  • 16
    • 0017949304 scopus 로고
    • 10.1063/1.325059
    • E. G. Bylander, J. Appl. Phys., 49, 1188 (1978). 10.1063/1.325059
    • (1978) J. Appl. Phys. , vol.49 , pp. 1188
    • Bylander, E.G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.