In-plane interdot carrier transfer in InAs/GaAs quantum dots

Applied Physics Letters

Volumn 100, Issue 15, 2012, Pages

  Bhattacharyya, J ^a   Zybell, S ^a   Winnerl, S ^a   Helm, M ^a   Hopkinson, M ^b   Wilson, L R ^b   Schneider, H ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER RELAXATION; CARRIER TRANSFER; DOMINANT MECHANISM; INAS/GAAS; INAS/GAAS QUANTUM DOTS; INTERSUBLEVEL TRANSITIONS; RATE-EQUATION MODELS; RECOVERY TIME; SELF ASSEMBLED QUANTUM DOTS; THZ PULSE; TIME-RESOLVED PHOTOLUMINESCENCE;

FREE ELECTRON LASERS; QUENCHING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84859803067     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3701578     Document Type: Article

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