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Solid State Communications

Volumn 152, Issue 10, 2012, Pages 835-838

Negative differential resistance of a metal-insulator-metal device with gold nanoparticles embedded in polydimethylsiloxane

(4) Xie, Mengying a Aw, Kean C a Langlois, Mederic b Gao, Wei a

a UNIVERSITY OF AUCKLAND (New Zealand)

b UNIVERSITÉ DE CAEN (France)

Author keywords

A. Gold nanoparticles; A. Polydimethylsiloxane; D. Charge trapping; D. Negative differential resistance

Indexed keywords

GOLD NANOPARTICLES; MEMORY EFFECTS; METAL INSULATOR METALS; NEGATIVE DIFFERENTIAL RESISTANCES; TUNNELING MECHANISM;

CHARGE TRAPPING; ELECTRON TUNNELING; METAL NANOPARTICLES; NEGATIVE RESISTANCE; SILICONES;

MIM DEVICES;

EID: 84859762939 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/j.ssc.2012.02.023 Document Type: Article

Times cited : (13)

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