Electrical characteristics of poly(methylsilsesquioxane) thin films for non-volatile memory

Solid State Communications

Volumn 151, Issue 4, 2011, Pages 297-300

  Ahmad, Zubair ^a,b   Ooi, P C ^a   Aw, K C ^a   Sayyad, M H ^b  

^a UNIVERSITY OF AUCKLAND   (New Zealand)

^b GIK INSTITUTE OF ENGINEERING SCIENCES AND TECHNOLOGY   (Pakistan)

Author keywords

A. Polymethylsilsesquioxane; B. Spin casting; C. Metalpolymersemiconductor (MPS) structure; D. Non volatile memory

Indexed keywords

A. POLYMETHYLSILSESQUIOXANE; AU NANOPARTICLE; BARRIER HEIGHTS; C. METALPOLYMERSEMICONDUCTOR (MPS) STRUCTURE; CHARGE STORAGE; CHARGE TRANSPORT MECHANISMS; CONDUCTION MECHANISM; ELECTRICAL CHARACTERISTIC; ELECTRICAL PARAMETER; IDEALITY FACTORS; MEMORY EFFECTS; MEMORY ELEMENT; METHYLSILSESQUIOXANE; NON-VOLATILE MEMORIES; RECTIFICATION RATIO; REVERSE-SATURATION CURRENTS; SHUNT AND SERIES RESISTANCE; SI ELECTRODES; SPACE-CHARGE-LIMITED CURRENT; SPIN CASTING;

CARRIER MOBILITY; ELECTRIC RECTIFIERS; NANOPARTICLES; THIN FILMS;

GOLD;

EID: 78651364923     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2010.12.002     Document Type: Article

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