Pauli spin blockade in a highly tunable silicon double quantum dot

Scientific Reports

Volumn 1, Issue , 2011, Pages

  Lai, N S ^a   Lim, W H ^a   Yang, C H ^a   Zwanenburg, F A ^a   Coish, W A ^b   Qassemi, F ^c   Morello, A ^a   Dzurak, A S ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b MCGILL UNIVERSITY   (Canada)

^c UNIVERSITY OF WATERLOO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

QUANTUM DOT; SILICON;

ARTICLE; ELECTRIC CAPACITANCE; ELECTRON TRANSPORT; EQUIPMENT DESIGN; NANOTECHNOLOGY; QUANTUM THEORY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR;

ELECTRIC CAPACITANCE; ELECTRON TRANSPORT; EQUIPMENT DESIGN; MICROSCOPY, ELECTRON, SCANNING; NANOTECHNOLOGY; QUANTUM DOTS; QUANTUM THEORY; SEMICONDUCTORS; SILICON;

EID: 84859757708     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep00110     Document Type: Article

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