Diffusion coefficients of two mobile ions in three AB 3In 7VI 12 single crystals (AB=Cu and Ag VI=Se or Te). Proposition of an equivalent electrical circuit

Journal of Crystal Growth

Volumn 348, Issue 1, 2012, Pages 31-39

  Diaz R ^a  

^a UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

Author keywords

A1. Defects; A1. Diffusion; B2. Semiconducting indium compounds; B3. Solar cells

Indexed keywords

ANTISITES; CHALCOPYRITE THIN FILMS; CONDUCTIVITY VARIATION; CU IONS; CURRENT INTENSITY; DEFECT PAIRS; ELECTRICAL FIELD; ELECTRICAL MODELS; EQUIVALENT ELECTRICAL CIRCUITS; EXPERIMENTAL DATA; INTERFACE POTENTIALS; METAL/SEMICONDUCTOR INTERFACE; MIXED IONIC AND ELECTRONIC CONDUCTORS; MOBILE IONS; POTENTIAL DROP; SOLAR CELL FABRICATION; SUB-LATTICES; TOTAL FLUX;

COPPER COMPOUNDS; DIFFUSION; IONS; NETWORKS (CIRCUITS); SEMICONDUCTING SELENIUM COMPOUNDS; SINGLE CRYSTALS;

IONIC CONDUCTION;

EID: 84859632842     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.03.031     Document Type: Article

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