CuIn1-xGaxSe2 growth process modifications: Influences on microstructure, Na distribution, and device properties

Solar Energy Materials and Solar Cells

Volumn 95, Issue 6, 2011, Pages 1477-1481

  Seyrling, S ^a   Chirila, A ^a   Guttler D ^a,b   Blosch P ^a   Pianezzi, F ^a   Verma, R ^a   Bucheler S ^a   Nishiwaki, S ^a   Romanyuk, Y E ^a   Rossbach, P ^a   Tiwari, A N ^a  

^a SWISS FEDERAL LABORATORIES FOR MATERIALS SCIENCE AND TECHNOLOGY   (Switzerland)

^b ETH ZURICH   (Switzerland)

Author keywords

CIGS; Cu excess; Sodium; Solar cells; Three stage process

Indexed keywords

ABSORBER THICKNESS; CIGS; CO-EVAPORATIONS; CU EXCESS; CUINGASE; DEVICE PROPERTIES; EXPOSURE TIME; GRAIN SIZE; GROUP III; GROWTH PROCESS; GROWTH REGIME; HIGH PERFORMANCE DEVICES; HIGH TEMPERATURE; HIGH-EFFICIENCY SOLAR CELLS; INTERMEDIATE STAGE; MULTI-STAGE; ORDERED VACANCY COMPOUND; PHOTOVOLTAIC PERFORMANCE; RICH PHASE; SUBSTRATE TEMPERATURE; THREE-STAGE PROCESS;

EFFICIENCY; EVAPORATION; FILM GROWTH; GALLIUM; MICROSTRUCTURE; PHASE TRANSITIONS; SODIUM; SOLAR CELLS;

COPPER;

EID: 79955033749     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2011.01.003     Document Type: Article

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