Microstructure and thermoelectric properties of CoSb 2.75Ge 0.25-xTe x prepared by rapid solidification

Acta Materialia

Volumn 60, Issue 8, 2012, Pages 3536-3544

  Su, Xianli ^a,b   Li, Han ^a   Yan, Yonggao ^a   Wang, Guoyu ^b   Chi, Hang ^b   Zhou, Xiaoyuan ^b   Tang, Xinfeng ^a   Zhang, Qingjie ^a   Uher, Ctirad ^b  

^a WUHAN UNIVERSITY OF TECHNOLOGY   (China)

^b UNIVERSITY OF MICHIGAN   (United States)

Author keywords

Electrical resistivity conductivity; Melt spinning; Nanocomposite; Thermal conductivity

Indexed keywords

AVERAGE GRAIN SIZE; BULK SAMPLES; DOUBLE DOPING; ELECTRICAL RESISTIVITY; FIGURE OF MERITS; FREE SURFACES; GE CONTENT; HEAT TRANSPORT; IN-SITU; PNICOGENS; SKUTTERUDITE COMPOUNDS; SPARK PLASMA; SPARK PLASMA SINTERING METHOD; STRUCTURAL DATA; THERMOELECTRIC PROPERTIES; VIBRATION MODES;

MELT SPINNING; NANOCOMPOSITES; RAPID SOLIDIFICATION; SKUTTERUDITES; SPARK PLASMA SINTERING; THERMAL CONDUCTIVITY; TRANSMISSION ELECTRON MICROSCOPY; TRANSPORT PROPERTIES;

GERMANIUM;

EID: 84859406259     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2012.02.034     Document Type: Article

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