Structure and transport properties of double-doped CoSb 2.75Ge0.25- xTex (x = 0.125-0.20) with in situ nanostructure

Chemistry of Materials

Volumn 23, Issue 11, 2011, Pages 2948-2955

  Su, Xianli ^a,b   Li, Han ^a   Wang, Guoyu ^b   Chi, Hang ^b   Zhou, Xiaoyuan ^b   Tang, Xinfeng ^a   Zhang, Qingjie ^a   Uher, Ctirad ^b  

^a WUHAN UNIVERSITY OF TECHNOLOGY   (China)

^b UNIVERSITY OF MICHIGAN   (United States)

Author keywords

in situ nanostructure; point defect; skutterudite; Thermoelectric properties

Indexed keywords

ABSOLUTE VALUES; ELECTRICAL CONDUCTIVITY; ELECTRICAL TRANSPORT PROPERTIES; HEAT TRANSPORT; IN-SITU; IN-SITU NANOSTRUCTURE; LATTICE THERMAL CONDUCTIVITY; MATRIX; PNICOGENS; SKUTTERUDITE; SKUTTERUDITE COMPOUNDS; SKUTTERUDITE STRUCTURES; THERMOELECTRIC FIGURE OF MERIT; THERMOELECTRIC POWER FACTORS; THERMOELECTRIC PROPERTIES; VIBRATIONAL MODES;

CRYSTAL LATTICES; DEFECTS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRIC POWER FACTOR; GERMANIUM; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NANOSTRUCTURES; PHONONS; POINT DEFECTS; SKUTTERUDITES; SPARK PLASMA SINTERING; THERMOELECTRIC EQUIPMENT; THERMOELECTRIC POWER; THERMOELECTRICITY; TRANSMISSION ELECTRON MICROSCOPY; TRANSPORT PROPERTIES;

THERMAL CONDUCTIVITY;

EID: 79958847977     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm200560s     Document Type: Article

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