Photoluminescence from SiO x layers containing amorphous silicon nanoparticles

Physica Status Solidi (A) Applications and Materials Science

Volumn 209, Issue 4, 2012, Pages 746-751

  Nesheva, D ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

amorphous silicon; nanoparticles; photoluminescence; silicon suboxide

Indexed keywords

AMORPHOUS SI; AMORPHOUS SILICON NANOPARTICLES; ANNEALED FILMS; ANNEALING TIME; CARRIER RECOMBINATION; DEFECT STATE; FURNACE ANNEALING; IN-VACUUM; INITIAL FILM; LOW-ENERGY BAND; NAKED-EYE; NANOPARTICLE SIZES; PL BANDS; PL SPECTRA; RADIATIVE RECOMBINATION; RED SHIFT; ROOM TEMPERATURE; SILICON SUBOXIDE; SYSTEMATIC STUDY; THERMAL QUENCHING; TRANSMISSION MEASUREMENTS;

AMORPHOUS FILMS; ANNEALING; FILM PREPARATION; INTERFACE STATES; NANOPARTICLES; PHASE SEPARATION; PHOTOLUMINESCENCE; SILICON; SILICON COMPOUNDS; SILICON OXIDES; THERMAL EVAPORATION;

AMORPHOUS SILICON;

EID: 84859354901     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201127561     Document Type: Article

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