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Journal of Materials Chemistry

Volumn 22, Issue 16, 2012, Pages 7715-7717

High-performance organic field-effect transistors based on dihexyl-substituted dibenzo[d,d′]thieno[3,2-b;4,5-b′]dithiophene

(5) Miyata, Yasuo a Yoshikawa, Eiji a Minari, Takeo b,c Tsukagoshi, Kazuhito b,d Yamaguchi, Shigehiro e

a SUMITOMO CHEMICAL CO LTD (Japan)

b NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

c RIKEN (Japan)

d JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

e NAGOYA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT INTERFACE; FIELD-EFFECT MOBILITIES; HYSTERESIS BEHAVIOR; P-TYPE; ROOM TEMPERATURE; SUBSTANTIAL REDUCTION;

INTERFACES (MATERIALS);

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 84859239616 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/c2jm30840a Document Type: Article

Times cited : (40)

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