Anodic Nb 2O 5 nonvolatile RRAM

IEEE Transactions on Electron Devices

Volumn 59, Issue 4, 2012, Pages 1144-1148

  Kundozerova, T V ^a   Grishin, A M ^a   Stefanovich, G B ^b   Velichko, A A ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b PETROZAVODSK STATE UNIVERSITY   (Russian Federation)

Author keywords

Conduction mechanism; dielectric film; impedance spectroscopy; memristor; niobium pentoxide; retention characteristics; unipolar resistance switching

Indexed keywords

CONDUCTION MECHANISM; IMPEDANCE SPECTROSCOPY; MEMRISTOR; NIOBIUM PENTOXIDE; RETENTION CHARACTERISTICS; UNIPOLAR RESISTANCE SWITCHING;

ANODIC OXIDATION; DIELECTRIC FILMS; ELECTROFORMING; MEMRISTORS; NIOBIUM OXIDE; PASSIVE FILTERS; RANDOM ACCESS STORAGE; RESISTORS; SEMICONDUCTOR STORAGE; SILICON WAFERS;

NONVOLATILE STORAGE;

EID: 84859211968     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2182515     Document Type: Article

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