Highly sensitive, silicon-on-insulator nanowire based photodetector: Device optimization and analysis

Proceedings of the IEEE Conference on Nanotechnology

Volumn , Issue , 2011, Pages 873-876

  Fadavi Roudsari, A ^a   Li, G ^c   Saini, S S ^a   O, N ^b   Anantram, M P ^c  

^a UNIVERSITY OF WATERLOO   (Canada)

^b DALSA Corporation   (Canada)

^c University of Washington   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE OPTIMIZATION; HIGHLY SENSITIVE; MULTIPLE GATES; NEW RESULTS; PHOTORESPONSIVITY; SILICON ON INSULATOR;

NANOWIRES; PHOTOTRANSISTORS;

NANOTECHNOLOGY;

EID: 84858995046     PISSN: 19449399     EISSN: 19449380     Source Type: Conference Proceeding    
DOI: 10.1109/NANO.2011.6144475     Document Type: Conference Paper

References (9)

1. A. Fadavi Roudsari, S. S. Saini, N. O, and M. P. Anantram, "High - gain multiple - gate photodetector with nanowires in the channel" IEEE Elec. Dev. Lett., vol. 32, no. 3. pp. 357-359, March 2011.
2. A. Zhang, S. You, C. Soci, Y. Liu, D. Wang, and Y. H. Lo, "Silicon nanowire detectors showing phototransistive gain," Appl. Phys. Lett., vol. 93, no. 12, pp. 121110, Sep. 2008.
3. J. Wang, M. Gudiksen, X. Duan, Y. Cui, C. M. Lieber, "Highly polarized photoluminescence and photodetection from single indium phosphide nanowires," Science, vol. 293, no. 5534, pp. 1455-1457, Aug. 2001.
4. M. Freitag, Y. Martin, J. A. Misewich, R. Martel, and P. Avouris, "Photoconductivity of Single Carbon Nanotubes," Nano Lett., vol. 3, no. 8, pp. 1067-1071, Aug. 2003.
5. J. D. Holmes, K. P. Johnston, R. C. Doty, and B. A. Korgel, "Control of Thickness and Orientation of Solution-Grown Silicon Nanowires," Science, vol. 287, no. 5457, pp. 1471-1473, Feb. 2000.
6. D. Shiri, Y. Kong, A. Buin, and M. P. Anantram, "Strain Induced Change of Bandgap and Effective Mass in Silicon Nanowires," Applied Physics Letters, vol. 93, no. 7, pp. 073114, Aug. 2008.
7. A. Fadavi Roudsari, S. S. Saini, N. O, and M. P. Anantram, "High Gain, Silicon-on-insulator Photodetector with Multiple Gates and a Nanowire Based Narrow-wide-narrow Channel" in Proc. MRS, 2011, vol. 1305.
8. H. Yamamoto, K. Taniguchi, and C. Hamaguchi, "High-sensitivity SOI MOS photodetector with self-amplification," Jpn. J. Appl. Phys. vol. 35, no. 2B, pp. 1382-1386, Feb. 1996.
9. Atlas, Silvaco. [Online]. Available: www.silvaco.com.