Fabrication and characterization of surface type Schottky diode hydrogen sensor using polyaniline/porous 3C-SiC

Synthetic Metals

Volumn 162, Issue 7-8, 2012, Pages 636-640

  Kim, Kang San ^a   Chung, Gwiy Sang ^a  

^a University of Ulsan   (South Korea)

Author keywords

High temperature; Hydrogen sensor; Polyaniline; Porous 3C SiC

Indexed keywords

AVERAGE DIAMETER; COMPRESSED LIQUID; CURRENT VOLTAGE MEASUREMENT; ELECTRICAL CHARACTERISTIC; ELECTROCHEMICAL ANODIZATIONS; FAST RECOVERY; FAST RESPONSE; HETEROJUNCTION DIODES; HIGH LINEARITY; HIGH TEMPERATURE; HYDROGEN SENSING PROPERTIES; HYDROGEN SENSOR; P-N JUNCTION; POLYCRYSTALLINE; PORE DIAMETERS; POROUS 3C-SIC; RECOVERY TIME; SCHOTTKY DIODES; SENSING PROPERTY; SIC THIN FILMS; SPIN-COATING METHOD;

CHEMICAL SENSORS; HETEROJUNCTIONS; LIQUEFIED GASES; POLYANILINE; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES;

SILICON CARBIDE;

EID: 84858987220     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2012.02.007     Document Type: Article

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