Study on post-etching processes for p-type GaN using HAX-PES

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 9, Issue 3-4, 2012, Pages 927-930

  Kikuta, Daigo ^a   Narita, Tetsuo ^a   Takahashi, Naoko ^a   Kataoka, Keita ^a   Kimoto, Yasuji ^a   Tomita, Kazuyoshi ^a   Uesugi, Tsutomu ^a   Kachi, Tetsu ^a  

^a Rd Management Section   (Japan)

Author keywords

Band bending; Etching damage; HAX PES; P type GaN; Post etching process

Indexed keywords

BANDBENDING; BUILT-IN POTENTIAL; DAMAGED LAYERS; DEEP DONOR; DEPTH PROFILE; ETCHING CONDITION; HARD X RAY; HAX-PES; ICP ETCHING; P-TYPE GAN; POST-ETCHING PROCESS; SURFACE LAYERS;

GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA;

ETCHING;

EID: 84858816122     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201100335     Document Type: Article

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