Dielectric, conduction and interface properties of Au/Pc/p-Si Schottky barrier diode

Synthetic Metals

Volumn 162, Issue 5-6, 2012, Pages 477-482

  Altindal, Ahmet ^a   Coşkun, Mustafa ^b   Bekaroǧlu, Özer ^c  

^a YILDIZ TECHNICAL UNIVERSITY   (Turkey)

^b ISTANBUL MEDENIYET UNIVERSITY   (Turkey)

^c ISTANBUL TECHNICAL UNIVERSITY   (Turkey)

Author keywords

Clamshel; Dielectric; Interface trap; MIS structure; Tunneling

Indexed keywords

AC CONDUCTION; AC CONDUCTIVITY; BAND CONDUCTION MECHANISM; CAPACITANCE VOLTAGE; CLAMSHEL; CONDUCTION MECHANISM; EFFECT OF TEMPERATURE; FIXED FREQUENCY; HIGH FREQUENCY; HIGH-LOW FREQUENCY; HIGHER FREQUENCIES; HOPPING CONDUCTION; INTERFACE PROPERTY; INTERFACE TRAP; INTERMEDIATE FREQUENCIES; LOW FREQUENCY; LOW FREQUENCY REGIONS; METAL INSULATOR SEMICONDUCTOR CAPACITORS; MIS STRUCTURE; MULTI-HOPPING; QUANTUM-MECHANICAL TUNNELING; TEMPERATURE DEPENDENCE;

CAPACITANCE MEASUREMENT; CARRIER MOBILITY; DIELECTRIC PROPERTIES; ELECTRON TUNNELING; MIS DEVICES; QUANTUM THEORY; SCHOTTKY BARRIER DIODES; SILICON; SILICON COMPOUNDS; ZINC COMPOUNDS;

DIELECTRIC MATERIALS;

EID: 84858437094     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2012.01.002     Document Type: Article

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