Numerical evaluation of the short-circuit performance of 3.3-kV CIGBT in field-stop technology

IEEE Transactions on Power Electronics

Volumn 27, Issue 5, 2012, Pages 2673-2679

  Long, Hong Yao ^a   Luther King, Ngwendson ^a   Sweet, Mark R ^a   Narayanan, Ekkanath Madathil Sankara ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Clustered insulated gate bipolar transistor (CIGBT); insulated gate bipolar transistor (IGBT); short circuit

Indexed keywords

2-D NUMERICAL SIMULATION; CHARGE BALANCES; CLUSTERED INSULATED GATE BIPOLAR TRANSISTOR (CIGBT); ELECTRIC FIELD DISTRIBUTIONS; INSULATEDGATE BIPOLAR TRANSISTOR (IGBTS); NUMERICAL EVALUATIONS; ON-STATE VOLTAGE DROP; SATURATION CURRENT DENSITIES; SHORT-CIRCUIT CONDITIONS; TRENCH GATES;

ELECTRIC FIELDS; ELECTRIC NETWORK ANALYSIS; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); SHORT CIRCUIT CURRENTS;

COMPUTER SIMULATION;

EID: 84858027721     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2011.2175949     Document Type: Article

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