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Volumn 100, Issue , 2012, Pages 43-47

A comparative study of silicon surface passivation using ethanolic iodine and bromine solutions

Author keywords

Bulk lifetime; Minority carrier lifetime; Silicon surface passivation

Indexed keywords

BULK LIFETIME; COMPARATIVE STUDIES; ETHANOLIC SOLUTION; INJECTION LEVELS; MINORITY CARRIER LIFETIMES; MOLAR CONCENTRATION; NATIVE OXIDES; P-TYPE; PHOTOCONDUCTANCE; PRE-CONDITIONING; PROCESS PARAMETERS; SILICON SURFACE PASSIVATION; SILICON SURFACES; SINGLE CRYSTALLINE SILICON; SURFACE PASSIVATION;

EID: 84857792446     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2011.04.028     Document Type: Article
Times cited : (40)

References (12)
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    • The minority carrier lifetime values provided by the material supplier are generally measured on silicon block/ingot, which are different from the values obtained with the wafers (both with and without surface passivation).
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.