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In situ bulk lifetime measurement on silicon with a chemically passivated surface
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Effect of surface passivation on generation and recombination lifetimes in silicon wafer studied by impedance spectroscopy
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Sanjai Kumar, P.K. Singh, and S.R. Dhariwal Effect of surface passivation on generation and recombination lifetimes in silicon wafer studied by impedance spectroscopy Appl. Phys. Lett. 96 2010 162109(1) 162109(3)
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Bulk carrier lifetime measurement by the microwave reflectance photoconductivity decay method with external surface electric field
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M. Ichimura, A. Tada, E. Arai, and H. Takamatsu Bulk carrier lifetime measurement by the microwave reflectance photoconductivity decay method with external surface electric field Appl. Phys. Lett. 80 23 2002 4390 4392
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Very low bulk and surface recombination in oxidized silicon wafers
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M.J. Kerr, and A. Cuevas Very low bulk and surface recombination in oxidized silicon wafers Semicond. Sci. Technol. 17 2002 35 38 (Pubitemid 34080680)
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Effectiveness of 0.08 molar iodine in ethanol solution as a means of chemical surface passivation for photoconductance decay measurements
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A.W. Stephens, and M.A. Green Effectiveness of 0.08 molar iodine in ethanol solution as a means of chemical surface passivation for photoconductance decay measurements Sol. Energy Mater. Sol. Cells 45 1977 255 265
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Wet chemical surface passivation of germanium wafers by quinhydronemethanol treatment for minority carrier lifetime measurements
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B.P. Swain, H. Takato, and I. Sakata Wet chemical surface passivation of germanium wafers by quinhydronemethanol treatment for minority carrier lifetime measurements Appl. Phys. Express 2 2009 105501(1) 105501(3)
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Wet-chemical treatment of solar grade Cz silicon prior to surface passivation
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The minority carrier lifetime values provided by the material supplier are generally measured on silicon block/ingot, which are different from the values obtained with the wafers (both with and without surface passivation)
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The minority carrier lifetime values provided by the material supplier are generally measured on silicon block/ingot, which are different from the values obtained with the wafers (both with and without surface passivation).
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12
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Atomic-scale mechanistic study of iodine/alcohol passivated Si(1 0 0)
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R.T. Mo, T.A. Burr, G.T. Merklin, F. Machuca, P.A. Pianetta, L.C. Kimerling, R.P. Chiarello, and C.E.D. Chidsey Atomic-scale mechanistic study of iodine/alcohol passivated Si(1 0 0) in: Proceedings of the Electrochemical Society 99 2000 545 552
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Chidsey, C.E.D.8
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