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Volumn 96, Issue 16, 2010, Pages

Effect of surface passivation on generation and recombination lifetimes in silicon wafer studied by impedance spectroscopy

(3) Kumar, Sanjai a Singh, P K a Dhariwal, S R b

a NATIONAL PHYSICAL LABORATORY (India)

b LM College of Science and Technology (India)

Author keywords

[No Author keywords available]

Indexed keywords

BULK RECOMBINATION; CHEMICAL PASSIVATION; GENERATION LIFETIME; HYDROGEN ADSORPTION; IMPEDANCE SPECTROSCOPY; LOW WORK FUNCTION; MINORITY CARRIER LIFETIMES; P-N STRUCTURE; PHOTOCONDUCTIVE DECAY; RECOMBINATION LIFETIME; SEMITRANSPARENT LAYERS; SURFACE PASSIVATION;

GAS ADSORPTION; PALLADIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SURFACE REACTIONS;

PASSIVATION;

EID: 77951812991 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3385779 Document Type: Article

Times cited : (14)

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