Wet chemical surface passivation of germanium wafers by quinhydrone-methanol treatment for minority carrier lifetime measurements

Applied Physics Express

Volumn 2, Issue 10, 2009, Pages

  Swain, Bibhu P ^a   Takato, Hidetaka ^a   Sakata, Isao ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BULK LIFETIME; GE SURFACES; GE WAFER; GERMANIUM WAFER; MINORITY CARRIER; MINORITY CARRIER LIFETIMES; QUINHYDRONE; RECOMBINATION VELOCITY; WET CHEMICALS;

GERMANIUM; METHANOL; PASSIVATION;

CARRIER LIFETIME;

EID: 70350145701     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.2.105501     Document Type: Article

References (18)

1. C. O. Chui and K. C. Sawaswat: in Germanium-Based Technologies, ed. C. Claeys and E. Simoen (Elsevier, Amsterdam, 2007) p. 363.
2. J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanural, D. T. Danielson, J. Michel, and L. C. Kimerling: Appl. Phys. Lett. 87 (2005) 011110.
3. N. E. Posthuma, J. van der Heide, G. Flamand, and J. Poortmans: IEEE Trans. Electron Devices 54 (2007) 1210.
4. T. S. Horanyi, T. Pavelka, and P. Tutto: Appl. Surf. Sci. 63 (1993) 306.
5. H. Takato, I. Sakata, and R. Shimokawa: Jpn. J. Appl. Phys. 40 (2001) L1003.
6. H. Takato, I. Sakata, and R. Shimokawa: Jpn. J. Appl. Phys. 41 (2002) L870.
7. H. Takato, I. Sakata, and R. Shimokawa: Proc. 3rd World Conf. Photovoltaic Energy Conversion, Osaka, 2003, p. 1108.
8. H. Takato, I. Sakata, and R. Shimokawa: Proc. 4th World Conf. Photovoltaic Energy Conversion, Hawaii, 2006, p. 1421.
9. E. Gaubas and J. Vanhellemont: Appl. Phys. Lett. 89 (2006) 142106.
10. N. E. Posthuma, G. Flamand, W. Geens, and J. Poortmans: Sol. Energy Mater. Sol. Cells 88 (2005) 37.
11. D. Poelman, P. Clauws, and B. Depuydt: Sol. Energy Mater. Sol. Cells 76 (2003) 167.
12. C. O. Chui and K. C. Sawaswat: in Germanium-Based Technologies, ed. C. Claeys and E. Simoen (Elsevier, Amsterdam, 2007) p. 295.
13. H. Takato: unpublished.
14. K. Lauer, A. Laades, H. Ubensee, H. Metzner, and A. Lawerenz: J. Appl. Phys. 104 (2008) 104503.
15. D. K. Schroder: Semiconductor Material and Device Characterization (Wiley, New York, 1998) p. 420.
16. S. Kagawa, T. Mikawa, and T. Kaneda: Jpn. J. Appl. Phys. 21 (1982) 1616.
17. The values of D for minority carriers in Ge are not available at present. Since the mobilities of majority carriers in Ge are more than twice as high as those in Si (ref. 1), we assume that the values of D for minority carriers in Ge are also twice as large as those (30-37 cm2/s) in Si (ref. 15).
18. I. Sakata: Abstr. Int. Symp. Innovative Solar Cells, Tokyo, 2009, p. 145.