Modification of the three-stage evaporation process for CuIn 1-xGaxSe2 absorber deposition

Thin Solid Films

Volumn 519, Issue 21, 2011, Pages 7232-7236

  Seyrling, S ^a   Chirila, A ^a   Guttler D ^a   Pianezzi, F ^a   Rossbach, P ^a   Tiwari, A N ^a  

^a SWISS FEDERAL LABORATORIES FOR MATERIALS SCIENCE AND TECHNOLOGY   (Switzerland)

Author keywords

CIGS; Cu excess; Ga grading; Solar cells; Three stage process

Indexed keywords

ABSORBER LAYERS; CIGS; CO-EVAPORATIONS; COPPER CONCENTRATION; CU CONTENT; DEPOSITED LAYER; EVAPORATION PROCESS; GA GRADING; GROUP III; GROWTH PROCESS; HIGH-EFFICIENCY SOLAR CELLS; RICH PHASE; THREE-STAGE PROCESS;

GALLIUM; RAMAN SPECTROSCOPY;

SOLAR ABSORBERS;

EID: 80052164801     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.12.146     Document Type: Conference Paper

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