Manipulation of charge transfer across semiconductor interface. A criterion that cannot be ignored in photocatalyst design

Journal of Physical Chemistry Letters

Volumn 3, Issue 5, 2012, Pages 663-672

  Kamat, Prashant V ^a  

^a UNIVERSITY OF NOTRE DAME   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ENERGY; CHARGE SEPARATIONS; COMPOSITE ASSEMBLY; COUPLED SEMICONDUCTOR; DISCHARGE PROPERTIES; ELECTRON TRANSFER; FUTURE DESIGNS; HOLE TRANSFER; LIGHT-HARVESTING; MULTIFUNCTIONAL CATALYSTS; PHOTO-INDUCED ELECTRON TRANSFER; PHOTOCATALYTIC EFFICIENCY; PHOTOCATALYTIC PERFORMANCE; SEMICONDUCTOR ASSEMBLY; SEMICONDUCTOR INTERFACES; SEMICONDUCTOR METALS;

CHARGE TRANSFER; ELECTRON TRANSITIONS; METAL NANOPARTICLES;

DESIGN;

EID: 84857695659     PISSN: None     EISSN: 19487185     Source Type: Journal    
DOI: 10.1021/jz201629p     Document Type: Review

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