SCOPUS 정보 검색 플랫폼

Volumn 47, Issue 3, 2012, Pages 790-793

Structural and electrical properties of ternary Ru-AlN thin films prepared by plasma-enhanced atomic layer deposition

(8) Shin, Yu Ri a Kwack, Won Sub a Park, Yun Chang b Kim, Jin Hyock c Shin, Seung Yong d Moon, Kyoung Il d Lee, Hyung Woo a Kwon, Se Hun a

a Pusan National University (South Korea)

b National Nano Fab Center (NNFC) (South Korea)

c Hynix Semiconductor Inc (South Korea)

d Korea Institute of Industrial Technology (South Korea)

Author keywords

A. Thin films; B. Plasma deposition; D. Electrical properties; D. Microstructure

Indexed keywords

ALN; BRIGHTFIELD; ELECTRICAL PATH; ELECTRICAL PROPERTY; ELECTRICAL RESISTIVITY; ELEMENT MAPPING; ENERGY DISPERSIVE X-RAY SPECTROSCOPY; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; SCANNING TRANSMISSION ELECTRON MICROSCOPES; STRUCTURAL AND ELECTRICAL PROPERTIES;

COALESCENCE; ELECTRIC CONDUCTIVITY; ENERGY DISPERSIVE SPECTROSCOPY; MICROSTRUCTURE; MIXING; NITRIDES; RUTHENIUM; THIN FILMS;

ALUMINUM NITRIDE;

EID: 84857505153 PISSN: 00255408 EISSN: None Source Type: Journal
DOI: 10.1016/j.materresbull.2011.12.004 Document Type: Article

Times cited : (9)

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