Investigations of ultrathin Ru-WCN mixed phase films for diffusion barrier and copper direct-plate applications

ECS Transactions

Volumn 13, Issue 8, 2008, Pages 63-70

  Greenslit D ^a   Kumar, S ^b   Chakraborty, T ^a   Eisenbraun, E ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; DIFFUSION BARRIERS; PLASMA DEVICES; ULTRATHIN FILMS;

COPPER METALLIZATION; CU DIFFUSION BARRIER; METAL RATIO; MIXED PHASE; NANOLAMINATE; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; THICKNESS OF THE FILM; ULTRA-THIN;

RUTHENIUM COMPOUNDS;

EID: 64549164137     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3035368     Document Type: Conference Paper

References (9)

1. M.W. Lane, C.E. Murray, F.R. McFeely, P.M. Vereecken, and R. Rosenberg, Appl.Phys. Lett., 83, 2330 (2003).
2. H. Kim, T. Koseki, T. Ohba, T. Ohta, Y. Kojima, H. Sato, and Y. Shimogaki, J. Electrochem. Soc, 152 (8) G594 (2005).
3. A. Radisic, G. Oskam, and P.C. Searson, J. Electrochem. Soc., 151 (6) C369 (2004).
4. S. Kumar, D. Greenslit, E. Eisenbraun, Electrochem. Soc. Trans. 6, (8) 77 (2007)
5. W. Zeng, et al. Journal of Materials Research, Vol 22, No 3, 703 (2007).
6. Pourbaix, M., Atlas of Electrochemical Equilibria in Aqueous Solutions, Pergamon, New York (1966)
7. E.H. Niccolian and J.R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology, Wiley, New York(1982).
8. M.W. Lane, C.E. Murray, F.R. McFeely, P.M. Vereecken, and R. Rosenberg, Appl. Phys. Lett., 83, 2330 (2003).
9. O. Chyan, T.N. Arunagiri, T. Ponnuswamy, J. Electrochem. Soc., 150 (5) C347 (2003)