Development of the transparent conductive oxide layer for nanocrystalline cubic silicon carbide/silicon heterojunction solar cells with aluminum oxide passivation layers

Japanese Journal of Applied Physics

Volumn 51, Issue 2 PART 2, 2012, Pages

  Irikawa, Junpei ^a   Miyajima, Shinsuke ^a,b   Watahiki, Tatsuro ^a   Konagai, Makoto ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM OXIDES; ANNEALING TEMPERATURES; APERTURE-AREA EFFICIENCY; CUBIC SILICON CARBIDE; FILL FACTOR; FREE CARRIER ABSORPTION; HETEROJUNCTION SOLAR CELLS; NANOCRYSTALLINES; OPTICAL AND ELECTRICAL PROPERTIES; PASSIVATION LAYER; SILICON HETEROJUNCTIONS; SOLAR CELL PERFORMANCE; SURFACE REFLECTIONS; TRANSPARENT CONDUCTIVE OXIDES;

ELECTRIC PROPERTIES; HETEROJUNCTIONS; INDIUM; TIN; TIN OXIDES;

NANOCRYSTALLINE SILICON;

EID: 84857467313     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.02BP04     Document Type: Article

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