An upper limit on the lateral vacancy diffusion length in diamond

Diamond and Related Materials

Volumn 24, Issue , 2012, Pages 6-10

  Orwa, J O ^a   Ganesan, K ^b   Newnham, J ^b   Santori, C ^c   Barclay, P ^c,d,i   Fu, K M C ^c,j   Beausoleil, R G ^c   Aharonovich, I ^e   Fairchild, B A ^b   Olivero, P ^f,g,h   Greentree, A D ^b   Prawer, S ^b  

^a LA TROBE UNIVERSITY   (Australia)

^b UNIVERSITY OF MELBOURNE   (Australia)

^c HEWLETT PACKARD LABORATORIES   (United States)

^d NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^e HARVARD UNIVERSITY   (United States)

^f UNIVERSITY OF TURIN   (Italy)

^g SEZIONE DI TORINO   (Italy)

^h Consorzio Nazionale Interuniversitario per le Scienze Fisiche della Materia ^*  (Italy)

ⁱ UNIVERSITY OF CALGARY   (Canada)

^j UNIVERSITY OF WASHINGTON   (United States)

more..

Author keywords

Annealing; Ion implantation; Scattering; Vacancy diffusion

Indexed keywords

DIAMOND SURFACES; ELECTRICAL AND OPTICAL PROPERTIES; FAST DIFFUSION; GEOMETRIC EFFECTS; HE ION IMPLANTATION; HELIUM ATOM; IMPLANTATION-INDUCED DAMAGE; IMPLANTED REGION; ION DAMAGE; ION SCATTERING; SCATTERING EFFECTS; SINGLE-ATOM DEVICES; SUBSTRATE MODIFICATIONS; UPPER LIMITS; VACANCY CONCENTRATION; VACANCY DIFFUSION;

ANNEALING; COLOR CENTERS; DIAMONDS; DIFFUSION; ELECTRIC PROPERTIES; HELIUM; ION IMPLANTATION; MICROMETERS; SCATTERING;

VACANCIES;

EID: 84857426400     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2012.02.009     Document Type: Article

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