Calculation of the internal electric field within doped semiconductors

Semiconductor Science and Technology

Volumn 27, Issue 3, 2012, Pages

  Phelps, G J ^a  

^a UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

BOLTZMANN STATISTICS; DETAILED MODELS; DEVICE STRUCTURES; DOPING CONCENTRATION; ELECTRIC FIELD PROFILES; ELECTRON-HOLE PAIR GENERATION; ELECTROSTATIC POTENTIALS; FIRST-PRINCIPLES APPROACHES; INTERNAL ELECTRIC FIELDS; INTERNAL SUBSTRATE; MODELING OF SOLAR CELLS; NONLINEAR POISSON-BOLTZMANN EQUATION; POISSON'S EQUATION; SEMICONDUCTOR DOPANTS; SEMICONDUCTOR-TYPE;

BOLTZMANN EQUATION; CALCULATIONS; ELECTRIC FIELDS; NONLINEAR EQUATIONS; POISSON EQUATION;

SEMICONDUCTOR DOPING;

EID: 84857395812     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/27/3/035013     Document Type: Article

References (31)

1. McKelvey J P 1966 Solid State and Semiconductor Physics (New York: Harper and Row) p 397
2. Shockley W 1949 Bell Syst. Tech. J. 28 43589
3. Moss T S and Hilsum C 1993 Handbook on Semiconductors: Device Physics vol 4 (Amsterdam: Elsevier) p 8
4. Frankl D 1967 Electrical Properties of Semiconductor Surfaces (Oxford: Pergamon)
5. Sparkes J J 1964 J. Electron. Control 16 15368
6. Missous M and Rhoderick E H 1985 Solid-State Electron. 26 2337
7. Kingston R H and Neustadter S 1956 Bell Syst. Tech. J. 28 104158
8. Garrett C G B and Brattain W H 1955 Phys. Rev. 99 37687
9. Phelps G J 2003 Ion implantation phenomena in 4H silicon carbide PhD Thesis Newcastle University, UK: Newcastle University Library Thesis L7361
10. Phelps G J, Chester E G, Johnson C M and Wright N G 2003 J. Appl. Phys. 94 428590
11. Sze S M 1981 Physics of Semiconductor Devices (New York: Wiley) p 19
12. Holst M and Saied F 1993 Multigrid solution of the PoissonBoltzmann equation J. Comput. Chem. 14 10513
13. Baker N A, Sept D, Holst M J and McCammon J A 2001 IBM J. Res. Dev. 45 427
14. Levinshtein M E, Rumyantsev S L and Shur M S (ed) 2001 Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiC, and SiGe (New York: Wiley) pp 979
15. Levinshtein M, Rumyantsev S and Shur M (ed) 1996 Handbook Series on Semiconductor Parameters vol 1 (London: World Scientific Press) pp 34
16. Dargys A and Kundrotas J 1994 Handbook on Physical Properties of Ge, Si, GaAs and InP (Vilnius, Lithuania: Science and Encyclopedia Publishers) p 86
17. Pinto M R, Rafferty C S and Dutton R W 1984 PISCES II: Poisson and Continuity Solver (Stanford, CA: Stanford Electronics Laboratories, Stanford University)
18. Press W H, Flannery B P, Teukolsky S A and Vetterling W T 1994 Numerical Recipes in C (Cambridge: Cambridge University Press)
19. The MathWorks 1994 MATLAB User's Guide (Natick, MA: The MathWorks Inc.)
20. The MathWorks 1992 MATLAB Reference Guide (Natick, MA: The MathWorks Inc.)
21. Part-Enander E and Sjoberg A 1999 The MatLab 5 Handbook (Harlow, UK: Addison Wesley Longman)
22. Chester E G 2003 LU Decomposition and Back-substitution Routine, Trigiag.dll routine (UK: Department of Electrical, Electronic and Computer Engineering, University of Newcastle)
23. Haruki H, Sakai H, Kamiyama M and Uchida Y 1983 Sol. Energy Mater. 8 44155
24. Zheng G F, Zhang W, Shi Z, Thorp D and Green M A 1996 High-efficiency drift-field thin-film silicon solar cells by liquid-phase epitaxy and substrate thinning 25th IEEE Photovoltaic Specialists Conf. (Washington, May 1996) pp 6936
25. Yamaguchi T, Okamoto H and Nonomura S 1981 Japan. J. Appl. Phys. 20 195200
26. Wolf M 1963 Drift fields in photovoltaic solar energy converter cells Proc. IEEE 51 67493
27. Kandsberg P T 1975 Solid-State Electron. 18 104352
28. Jank A, Jung M, Lambert M, Lichter G and Schmoranzer H 1996 Microelectron. Eng. 31 2532
29. Bube R H 1992 Photoelectric Properties of Semiconductors (Cambridge: Cambridge University Press) p 248
30. Veloric H S and Prince M B 1957 Bell Syst. Tech. J. 36 9751004
31. Phelps G J 2006 Semicond. Sci. Technol. 21 91103