60GHz high-gain low-noise amplifiers with a common-gate inductive feedback in 65nm CMOS

Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium

Volumn , Issue , 2011, Pages

  Hsieh, Hsieh Hung ^a   Wu, Po Yi ^a   Jou, Chewn Pu ^a   Hsueh, Fu Lung ^a   Huang, Guo Wei ^b  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

CMOS RF; common gate inductive feedback; gain enhancement; low noise amplifier (LNA); millimeter wave; wideband

Indexed keywords

3 DB BANDWIDTH; CASCODE; CMOS PROCESSS; CMOS RF; COMMON GATES; COMMON-GATE TRANSISTOR; DC POWER; DC POWER CONSUMPTION; GAIN ENHANCEMENT; GATE INDUCTORS; HIGH-GAIN; INDUCTIVE FEEDBACK; NOVEL DESIGN; SUPPLY VOLTAGES; WIDE-BAND; WIDEBAND OPERATION;

BANDWIDTH; CMOS INTEGRATED CIRCUITS; DC POWER TRANSMISSION; DIGITAL INTEGRATED CIRCUITS; ELECTRIC INDUCTORS; ELECTRIC LINES; HIGH FREQUENCY AMPLIFIERS; MILLIMETER WAVES; NOISE FIGURE; RADIO; RADIO FREQUENCY AMPLIFIERS; RADIO WAVES;

LOW NOISE AMPLIFIERS;

EID: 79960762485     PISSN: 15292517     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RFIC.2011.5940665     Document Type: Conference Paper

References (5)

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