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Applied Physics Letters

Volumn 100, Issue 6, 2012, Pages

Investigation of the device instability feature caused by electron trapping in pentacene field effect transistors

(1) Park, Chang Bum a,b

a LG Display Co Ltd (South Korea)

b UNIVERSITY OF TOKYO (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRAPPING; GAP STATE; GATE BIAS; NUMBER OF ELECTRONS; PENTACENE FIELD EFFECT TRANSISTORS; PENTACENES; PHOTO-INDUCED; PHOTO-IRRADIATION; THRESHOLD VOLTAGE SHIFTS;

FIELD EFFECT TRANSISTORS;

ELECTRON TRAPS;

EID: 84857198828 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3680248 Document Type: Article

Times cited : (6)

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