InGaAs quantum dots grown by molecular beam epitaxy for light emission on Si substrates

Journal of Nanoscience and Nanotechnology

Volumn 11, Issue 10, 2011, Pages 9153-9159

  Bru Chevallier, C ^a   El Akra, A ^a,b   Pelloux Gervais, D ^a   Dumont, H ^b   Canut, B ^a   Chauvin, N ^a   Regreny, P ^b   Gendry, M ^b   Patriarche, G ^c   Jancu, J M ^d   Even, J ^d   Noe, P ^e   Calvo, V ^e   Salem, B ^f  

^a UNIVERSITÉ DE LYON   (France)

^b ECOLE CENTRALE DE LYON   (France)

^c UNIV PARIS SUD   (France)

^d UNIVERSITÉ DE RENNES 1   (France)

^e CEA GRENOBLE   (France)

^f CNRS   (France)

Author keywords

InGaAs; Light Emission; Molecular Beam Epitaxy; Quantum Dots; Silicon

Indexed keywords

ABSORPTION COEFFICIENTS; BEAM EQUIVALENT PRESSURE; CONFINEMENT EFFECTS; DEPOSITED MATERIALS; DISLOCATION FREE; ELECTRONIC MICROSCOPY; ENERGY BANDGAPS; ETCHING PROCESS; HIGH DENSITY; INGAAS; INGAAS QUANTUM DOTS; KEYPOINTS; LIGHT EMISSION DEVICES; OPTOELECTRONIC APPLICATIONS; PHOTOLUMINESCENCE EMISSION; QUANTUM DOT; QUANTUM WELL; RUTHERFORD BACK-SCATTERING SPECTROMETRY; SI (001) SUBSTRATE; SI LAYER; SI SUBSTRATES; SILICON BAND GAP; SILICON EPILAYER; SILICON QUANTUM WELLS; SILICON SUBSTRATES; SOI SUBSTRATES; STRUCTURAL QUALITIES; TIGHT-BINDING APPROXIMATIONS; TYPE II;

ENERGY GAP; EPITAXIAL GROWTH; GALLIUM; INTERFACES (MATERIALS); LIGHT EMISSION; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM WELLS; SILICA; SILICON; SILICON COMPOUNDS; SILICON OXIDES; SUBSTRATES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84857174121     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2011.4282     Document Type: Conference Paper

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