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Volumn 520, Issue 8, 2012, Pages 3419-3422
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Influence of Al co-deposition on the crystal growth of Co-based Heusler-compound thin films on Si(111)
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Author keywords
Co based Heusler compound; LTMBE; Spintronics
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Indexed keywords
ADDITION TECHNIQUE;
CODEPOSITION;
GROWTH TECHNIQUES;
HEUSLER COMPOUND;
LARGE SCALE INTEGRATED CIRCUIT;
LOW TEMPERATURES;
LTMBE;
REACTION LAYERS;
SI (1 1 1);
SPINTRONIC APPLICATIONS;
SPINTRONIC DEVICE;
VALENCE ELECTRON;
ALUMINUM;
CARBON DIOXIDE;
COBALT;
CRYSTAL GROWTH;
DEPOSITION;
EPITAXIAL GROWTH;
FILM GROWTH;
INTERFACES (MATERIALS);
MAGNETOELECTRONICS;
MOLECULAR BEAM EPITAXY;
SILICON;
SILICON COMPOUNDS;
COBALT COMPOUNDS;
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EID: 84857042463
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2011.10.080 Document Type: Conference Paper |
Times cited : (13)
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References (14)
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