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Volumn 96, Issue 8, 2010, Pages

Significant growth-temperature dependence of ferromagnetic properties for Co2FeSi/Si(111) prepared by low-temperature molecular beam epitaxy

(6) Yamada, S a Hamaya, K a,b Yamamoto, K a Murakami, T a Mibu, K c Miyao, M a,b

a KYUSHU UNIVERSITY (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

c NAGOYA INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPILAYERS GROWN; FERROMAGNETIC PROPERTIES; GROWTH-TEMPERATURE DEPENDENCE; HALF-METALLIC; HETERO-INTERFACES; HEUSLER; HIGH QUALITY; IN-PLANE MAGNETIC ANISOTROPY; LOW TEMPERATURES; REACTION PHASIS; SI-BASED; SPINTRONIC DEVICE;

CRYSTAL GROWTH; EPILAYERS; FERROMAGNETIC MATERIALS; FERROMAGNETISM; MAGNETIC ANISOTROPY; MAGNETIC MOMENTS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PHASE INTERFACES; SILICON; SILICON ALLOYS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77749297946 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3330895 Document Type: Article

Times cited : (67)

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