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Journal of Applied Physics

Volumn 109, Issue 7, 2011, Pages

Low-temperature grown quaternary Heusler-compound Co2Mn 1-xFexSi films on Ge(111)

(8) Yamada, S a Hamaya, K a,b Murakami, T a Varaprasad, B c Takahashi, Y K b,c Rajanikanth, A c Hono, K c Miyao, M a,b

a KYUSHU UNIVERSITY (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

c NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GROUP-IV SEMICONDUCTORS; HEUSLER; LOW TEMPERATURE GROWTH; LOW TEMPERATURES; LOW-TEMPERATURE GROWN; LSI TECHNOLOGY; POINT CONTACT ANDREEV REFLECTION; SCALE INTEGRATED CIRCUITS; SI FILMS; SPINTRONIC APPLICATIONS; SPINTRONIC DEVICE;

COBALT; COBALT COMPOUNDS; GERMANIUM; MAGNETIC MOMENTS; MANGANESE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79955375813 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3563039 Document Type: Conference Paper

Times cited : (29)

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