Tunable catalytic alloying eliminates stacking faults in compound semiconductor nanowires

Nano Letters

Volumn 12, Issue 2, 2012, Pages 855-860

  Heo, Hoseok ^a   Kang, Kibum ^a   Lee, Donghun ^a   Jin, Li Hua ^b   Back, Hyeon Jun ^c   Hwang, Inchan ^a   Kim, Miseong ^a   Lee, Hyun Seung ^a   Lee, Byeong Joo ^a   Yi, Gyu Chul ^c   Cho, Yong Hoon ^b   Jo, Moon Ho ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c Seoul National University   (South Korea)

Author keywords

band gap modulation; II VI semiconductor; stacking faults; Twin defects

Indexed keywords

AU CATALYSTS; BANDGAP MODULATION; CATALYTIC GROWTH; COMPOUND SEMICONDUCTORS; ELECTRON TRANSPORT; II-VI SEMICONDUCTOR; INTERFACIAL INSTABILITY; INTRINSIC ENERGY; LIGHT DETECTION; PLANAR DEFECT; SEMICONDUCTOR NANOWIRE; STATIC DISORDER; SURFACE ENERGIES; SYNTHETIC ROUTES; TEMPORAL RESPONSE; VISIBLE RANGE; ZINC BLENDE;

DEFECTS; NANOWIRES; SEMICONDUCTOR GROWTH; STACKING FAULTS; SURFACE CHEMISTRY; ZINC;

ALLOYING;

ALLOY; CADMIUM; GOLD; NANOWIRE; TELLURIUM; ZINC;

ARTICLE; CATALYSIS; CHEMISTRY; PARTICLE SIZE; SEMICONDUCTOR; SURFACE PROPERTY;

ALLOYS; CADMIUM; CATALYSIS; GOLD; NANOWIRES; PARTICLE SIZE; SEMICONDUCTORS; SURFACE PROPERTIES; TELLURIUM; ZINC;

EID: 84856954620     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl203900q     Document Type: Article

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