Thermal conductivity calculation with the molecular dynamics direct method I: More robust simulations of solid materials

Journal of Computational and Theoretical Nanoscience

Volumn 8, Issue 10, 2011, Pages 2129-2143

  Howell, P C ^a  

^a SIEMENS AG   (Germany)

Author keywords

Direct Method; Heat Diffusion; Molecular Dynamics; Silicon; Thermal Conductivity

Indexed keywords

BULK CRYSTALLINE; BULK THERMAL CONDUCTIVITY; CLASSICAL MOLECULAR DYNAMICS; DIRECT METHOD; EXTENSIVE SIMULATIONS; FITTING PROCEDURE; HEAT DIFFUSION EQUATIONS; HEAT DIFFUSIONS; HIGH QUALITY; LARGE SYSTEM; NON EQUILIBRIUM; ROBUST SIMULATIONS; SIMULATION PARAMETERS; SOLID MATERIAL; STILLINGER-WEBER POTENTIALS; TEMPERATURE PROFILES; TERSOFF POTENTIAL; TEST CASE; TRANSIENT BEHAVIOR;

BOUNDARY CONDITIONS; MOLECULAR DYNAMICS; PARTIAL DIFFERENTIAL EQUATIONS; SILICON; THERMAL CONDUCTIVITY;

THERMAL CONDUCTIVITY OF SOLIDS;

EID: 84856922866     PISSN: 15461955     EISSN: None     Source Type: Journal    
DOI: 10.1166/jctn.2011.1935     Document Type: Article

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