On possible use of capped quantum dots in memory devices

Journal of Computational and Theoretical Nanoscience

Volumn 8, Issue 3, 2011, Pages 516-519

  Dokukin, M ^a   Guz, N ^a   Olac Vaw, R ^b   Mitin, V ^b   Sokolov, I ^a  

^a CLARKSON UNIVERSITY   (United States)

^b State University of New York   (United States)

Author keywords

Memory Devices; Quantum Dots

Indexed keywords

A-DENSITY; AMBIENT CONDITIONS; ATOMIC FORCE MICROSCOPES; CDSE QDS; CHARGING TIME; MECHANICAL INTERACTIONS; MEMORY STORAGE; QUANTUM DOT; RECORDING INFORMATION; SYNERGISTIC ACTION;

ATOMIC FORCE MICROSCOPY; CADMIUM COMPOUNDS; DATA STORAGE EQUIPMENT; VIRTUAL STORAGE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84856846781     PISSN: 15461955     EISSN: None     Source Type: Journal    
DOI: 10.1166/jctn.2011.1710     Document Type: Article

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