Off-center shallow donors in a spherical Si quantum dot with dielectric border

International Journal of Quantum Chemistry

Volumn 112, Issue 6, 2012, Pages 1737-1745

  Cristea, M ^a   Niculescu, E C ^a  

^a UNIVERSITY POLITEHNICA OF BUCHAREST   (Romania)

Author keywords

binding energy; dielectric mismatch; electric field; quantum dot

Indexed keywords

CORE-SHELL INTERFACE; DIELECTRIC MISMATCH; EFFECTIVE MASS APPROXIMATION; ELECTRIC FIELD STRENGTH; ELECTRON CLOUD DISTRIBUTIONS; ELECTRON CLOUDS; ELECTRONIC ENERGY LEVELS; EXTERNAL ELECTRIC FIELD; GROUND-STATE ENERGIES; POLARIZATION CHARGES; RADIAL POSITION; SHALLOW DONORS; SI QUANTUM DOT; SURROUNDING MATRIX;

BINDING ENERGY; ELECTRIC FIELDS; ELECTRONIC PROPERTIES; FINITE ELEMENT METHOD; SILICON;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84856759027     PISSN: 00207608     EISSN: 1097461X     Source Type: Journal    
DOI: 10.1002/qua.23179     Document Type: Article

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