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European Physical Journal B

Volumn 79, Issue 3, 2011, Pages 363-369

Dielectric mismatch and central-cell corrections in doped silicon nanodots

(1) Niculescu, E C a

a UNIVERSITY POLITEHNICA OF BUCHAREST (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER MATERIAL; DIELECTRIC CONSTANTS; DIELECTRIC MISMATCH; DONOR-DOPED; DOPED SILICON; EFFECTIVE BOHR RADIUS; EFFECTIVE MASS APPROXIMATION; ELECTRON SPIN RESONANCE MEASUREMENTS; EXPERIMENTAL DATA; FINITE STEPS; IMAGE CHARGES; IMPURITY ATOMS; INSULATING GLASS; SHALLOW DONORS; SI QUANTUM DOT; SIZE-DEPENDENCE; SPHERICAL QUANTUM DOT; STRONG CONFINEMENT;

QUANTUM CONFINEMENT; SEMICONDUCTOR QUANTUM DOTS; SPIN DYNAMICS; SPIN GLASS;

SILICON;

EID: 79951500720 PISSN: 14346028 EISSN: 14346036 Source Type: Journal
DOI: 10.1140/epjb/e2010-10749-8 Document Type: Article

Times cited : (4)

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