SCOPUS 정보 검색 플랫폼

Dalton Transactions

Volumn 39, Issue 4, 2010, Pages 1012-1019

Narrow band gap and enhanced thermoelectricity in FeSb2

(5) Sun, Peijie a Oeschler, Niels a Johnsen, Simon b Iversen, Bo B b Steglich, Frank a

a MAX PLANCK INSTITUTE FOR CHEMICAL PHYSICS OF SOLIDS (Germany)

b AARHUS UNIVERSITY (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATE AGREEMENT; CHARGE-CARRIER MOBILITY; CRYOGENIC TEMPERATURES; CRYSTALLOGRAPHIC DEFECTS; DIFFUSION CONTRIBUTIONS; ELECTRON-ELECTRON CORRELATION; ENHANCEMENT FACTOR; ISOELECTRONIC SUBSTITUTION; NARROW BAND GAP; NARROW BANDS; NARROW GAP; NARROW-GAP SEMICONDUCTORS; REFERENCE COMPOUNDS; THEORETICAL PREDICTION; THERMOELECTRIC COOLING; THERMOPOWERS;

BIOACTIVITY; CARRIER CONCENTRATION; CRYSTAL IMPURITIES; ELECTRON CORRELATIONS; SINGLE CRYSTALS;

CARRIER MOBILITY;

EID: 74349096112 PISSN: 14779226 EISSN: 14779234 Source Type: Journal
DOI: 10.1039/b918909b Document Type: Article

Times cited : (95)

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