Photoelectric characterization of Cu(In,Ga)S2 solar cells obtained from rapid thermal processing at different temperatures

Solar Energy Materials and Solar Cells

Volumn 95, Issue 1, 2011, Pages 270-273

  Riedel, I ^a   Riediger, J ^a   Ohland, J ^a   Keller, J ^a   Knipper, M ^a   Parisi, J ^a   Mainz, R ^b   Merdes, S ^b  

^a UNIVERSITY OF OLDENBURG   (Germany)

^b HAHN MEITNER INSTITUT   (Germany)

Author keywords

Admittance spectroscopy; Chalcopyrite solar cells; Rapid thermal processing; Suns V OC analysis

Indexed keywords

ABSORBER FILMS; ADMITTANCE SPECTROSCOPIES; BAND GAPS; CHALCOPYRITE SOLAR CELLS; CONDUCTION BAND EDGE; CU(IN ,GA)S; CURRENT COLLECTION; CURRENT VOLTAGE; DEFECT LEVELS; DEFECT STATE; HIGH EFFICIENCY; HIGH TEMPERATURE; INTER-DIFFUSION; METAL LAYER; MINORITY CARRIER; P-TYPE; REDUCED LOSS; SULFUR VAPORS; TEMPERATURE DEPENDENT; TEMPERATURE PROFILES;

COPPER COMPOUNDS; DEFECTS; ELECTRIC ADMITTANCE; ELECTRON MOBILITY; ENERGY GAP; GALLIUM; OPEN CIRCUIT VOLTAGE; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SOLAR CELLS; SPECTRUM ANALYSIS; SULFUR;

ACTIVATION ENERGY;

EID: 78149357259     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2010.05.013     Document Type: Conference Paper

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