CuInS2 -CdS heterojunction valence band offset measured with near-UV constant final state yield spectroscopy

Journal of Applied Physics

Volumn 106, Issue 7, 2009, Pages

  Johnson, B ^a   Korte, L ^a   Luky, T ^a   Klaer, J ^a   Lauermann, I ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND OFFSETS; CDS; CDS LAYER; CHALCOPYRITE THIN FILMS; CHEMICAL BATH; CHEMICAL CHANGE; FINAL STATE; INFORMATION DEPTH; LOW-EXCITATION ENERGY; NUMBER OF SAMPLES; SPECTROSCOPIC METHOD; VALENCE BAND EDGES; VALENCE BAND OFFSETS;

CADMIUM COMPOUNDS; COPPER COMPOUNDS; DATA STORAGE EQUIPMENT; HETEROJUNCTIONS; PHOTOELECTRICITY; PHOTOIONIZATION; PHOTONS; POWER SUPPLY CIRCUITS; SEMICONDUCTING CADMIUM COMPOUNDS; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY; VALENCE BANDS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 70350104951     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3211918     Document Type: Article

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