InP-HEMT X-band low-noise amplifier with ultralow 0.6-mW power consumption

IEEE Electron Device Letters

Volumn 33, Issue 2, 2012, Pages 209-211

  Liu, Liang ^a   Alt, Andreas R ^a   Benedickter, Hansruedi ^a   Bolognesi, C R ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

High electron mobility transistor (HEMT); InP; low noise amplifier (LNA); X band

Indexed keywords

DC POWER CONSUMPTION; HIGH-SPEED; INP; INP HEMT; LOW-VOLTAGE; MINIMUM NOISE FIGURE; ROOM TEMPERATURE; SINGLE STAGE; X-BAND;

COPLANAR WAVEGUIDES; CUTOFF FREQUENCY; DC POWER TRANSMISSION; ELECTRON MOBILITY; HIGH ELECTRON MOBILITY TRANSISTORS; SINGLE ELECTRON TRANSISTORS;

LOW NOISE AMPLIFIERS;

EID: 84856300510     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2176713     Document Type: Article

References (9)

1. N. Chamberlain, C. Andricos, A. Berkun, K. Kumley, V. Krimskiy, R. Hodges, and S. Spitz, "T/R module development for large aperture L-band phased array," in Proc. IEEE Aerosp. Conf., Mar. 2005, pp. 1093-1103.
2. M. Rosker, "The wide and the narrow: DARPA/MTO programs for RF applications in wide bandgap and antimonide-based semiconductors," in Proc. IEEE Compound Semicond. Integr. Circuit Symp., Nov. 2005, pp. 13-16. (Pubitemid 43111153)
3. C. Nguyen, B. Brar, C. R. Bolognesi, J. J. Pekarik, H. Kroemer, and J. H. English, "Growth of InAs-AlSb quantum wells having both high mobilities and high concentrations," J. Electron. Mater., vol. 22, no. 2, pp. 255-258, Feb. 1993.
4. W. R. Deal, R. Tsai, M. D. Lange, J. B. Boos, B. R. Bennett, and A. Gutierrez, "A low power/low noise MMIC amplifier for phased-array applications using InAs/AlSb HEMT," in Proc. IEEE MTT-S Int. Symp. Dig., Jun. 2006, pp. 2051-2054. (Pubitemid 46924681)
5. B. Y. Ma, J. Bergman, P. Chen, J. B. Hacker, G. Sullivan, G. Nagy, and B. Brar, "InAs/AlSb HEMT and its application to ultra-low-power wideband high-gain low-noise amplifiers," IEEE Trans. Microw. Theory Tech., vol. 54, no. 12, pp. 4448-4455, Dec. 2006.
6. P. Roux, Y. Baeyens, J. Weiner, and Y. K. Chen, "Ultra-low-power X-band SiGe HBT low-noise amplifiers," in Proc. IEEE MTT-S Int. Microw. Symp., Jun. 2007, pp. 1787-1790. (Pubitemid 47486349)
7. J. F. Chang and Y. S. Lin, "0. 99mW3-10 GHz common-gate CMOS UWB LNA using T-match input network and self-body-bias technique," Electron. Lett., vol. 47, no. 11, pp. 658-659, May 2011.
8. C. H. Lin, X. B. Mei, Y. C. Chou, L. S. Lee, J. M. Yang, M. Y. Nishimoto, P. H. Liu, R. To, A. Cavus, R. Tsai, M. Wojtowicz, and R. Lai, "SubmW operation of InP HEMT X-band low-noise amplifiers for low power applications," in Proc. IEEE Compound Semicond. Integr. Circuit Symp., Oct. 2009, pp. 1-4.
9. L. Liu, A. R. Alt, H. Benedickter, and C. R. Bolognesi, "InP/GaInAs pHEMT ultralow-power consumption MMICs," in Proc. IEEE Compound Semicond. Integr. Circuit Symp., Oct. 2011, pp. 1-4.