Internal bias field in ferroelectric polymer thin film for nonvolatile memory applications

IEEE Electron Device Letters

Volumn 31, Issue 5, 2010, Pages 482-484

  Kim, Woo Young ^a   Ka, Du Youn ^a   Kim, Dong Soo ^a   Kwon, Il Woong ^a   Kim, Sang Youl ^a   Lee, Yong Soo ^a   Lee, Hee Chul ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b National Nano Fab Center (NNFC)   (South Korea)

Author keywords

Ferroelectric; Interface asymmetry; Internal bias field; Nonvolatile memory; Pulse period; Retention

Indexed keywords

COERCIVE FIELD; COERCIVE VOLTAGES; FERROELECTRIC INTERFACE; FERROELECTRIC POLYMERS; INTERFACE PHENOMENA; INTERNAL BIAS FIELD; NON-VOLATILE MEMORIES; NON-VOLATILE MEMORY APPLICATION; NONVOLATILE MEMORY DEVICES; PULSE PERIOD; REMANENT POLARIZATION;

FERROELECTRICITY; NONVOLATILE STORAGE; POLYMERIC FILMS;

FERROELECTRIC FILMS;

EID: 77951815526     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2042676     Document Type: Article

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