Experimental characterization of temperature-dependent electron transport in single-wall multi-tube carbon nanotube transistors

Physica Status Solidi - Rapid Research Letters

Volumn 6, Issue 2, 2012, Pages 62-64

  Sakalas, Paulius ^a,b   Claus, Martin ^a   Schroter, Michael ^c,d   Rumiantsev, Andrej ^e  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^b CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^c RFNano Corp   (United States)

^d UNIVERSITY OF CALIFORNIA   (United States)

^e Cascade Microtech GmbH   (Germany)

Author keywords

Carbon nanotubes; Current gain; Noise; Optical phonons; Phonon scattering; Transistors

Indexed keywords

CARBON NANOTUBE TRANSISTORS; CRYOGENIC TEMPERATURES; CURRENT GAIN; CURRENT GAINS; CURRENT INCREASE; CURRENT VOLTAGE; CUT-OFF; ELECTRON TRANSPORT; EXPERIMENTAL CHARACTERIZATION; MAXIMUM VALUES; NOISE; NOISE ANALYSIS; NOISE CHARACTERISTIC; NOISE FACTOR; NOISE SOURCE; NYQUIST NOISE; OPTICAL PHONON SCATTERING; OPTICAL PHONONS; RADIO FREQUENCIES; SINGLE-WALL; TEMPERATURE DEPENDENT; TRANSISTOR NOISE; VERY LOW TEMPERATURES;

CARBON; CARBON NANOTUBES; CURRENT VOLTAGE CHARACTERISTICS; DRAIN CURRENT; PHONON SCATTERING; PHONONS; SINGLE ELECTRON TRANSISTORS; TRANSISTORS;

SINGLE-WALLED CARBON NANOTUBES (SWCN);

EID: 84856261345     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201105442     Document Type: Article

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