Formation of nanoclusters with varying Pb/Se concentration and distribution after sequential Pb + and Se + ion implantation into SiO 2

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 273, Issue , 2012, Pages 199-202

  Markwitz, A ^a,b   Carder, D A ^a,b   Hopf, T ^a,b   Kennedy, J ^a,b   Chan, T K ^d   Mucklich A ^c   Osipowicz, T ^d  

^a GNS SCIENCE   (New Zealand)

^b MACDIARMID INSTITUTE FOR ADVANCED MATERIALS AND NANOTECHNOLOGY   (New Zealand)

^c INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^d NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Fibre optics; In situ ion implantation; In situ RBS; Ion implantation; Lead; Nanoclusters; Selenium; Solar cell technology

Indexed keywords

CONCENTRATION PROFILES; GLASS MELTS; HIGH TEMPERATURE; HOLLOW SHELLS; IMPLANTED REGION; IN-SITU; INERT MATRIX; MATRIX; RUTHERFORD BACK-SCATTERING SPECTROMETRY; SEQUENTIAL ION IMPLANTATION; SILICON PROCESSING; SOLAR CELL TECHNOLOGY;

ANNEALING; ELECTRON BEAMS; FIBER OPTICS; GLASS MANUFACTURE; IONS; LEAD; NANOCLUSTERS; NANOCRYSTALS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SELENIUM; SILICON COMPOUNDS; SILICON OXIDES; TRANSMISSION ELECTRON MICROSCOPY;

ION IMPLANTATION;

EID: 84856113044     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2011.07.075     Document Type: Conference Paper

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