Topography and field effects in secondary ion mass spectrometry Part II: Insulating samples

Surface and Interface Analysis

Volumn 44, Issue 2, 2012, Pages 238-245

  Lee, J L S ^a   Gilmore, I S ^a   Seah, M P ^a   Levick, A P ^a   Shard, A G ^a  

^a NATIONAL PHYSICAL LABORATORY   (United Kingdom)

Author keywords

charge compensation; dielectric materials; differential charging; field effects; flood gun; imaging; static SIMS; surface potential; topography

Indexed keywords

ANGULAR ACCEPTANCE; BEAM ENERGIES; CHARGE COMPENSATION; DIFFERENTIAL CHARGING; ELECTRON CHARGING; ELECTRON CURRENTS; ELECTRON ENERGIES; EXTRACTION FIELDS; FIELD EFFECTS; ION EXTRACTION; ION SIGNALS; MODEL SYSTEM; POLY(ETHYLENE TEREPHTHALATE) FIBRES; REFLECTRONS; SECONDARY IONS; STATIC SIMS;

COMPUTER SIMULATION; DIELECTRIC MATERIALS; ELECTRONS; ETHYLENE; FINITE ELEMENT METHOD; IMAGING TECHNIQUES; INSULATION; IONS; POLYETHYLENE TEREPHTHALATES; SECONDARY EMISSION; SECONDARY ION MASS SPECTROMETRY; SPECTROMETRY; SURFACE POTENTIAL; TOPOGRAPHY;

EXTRACTION;

EID: 84856103492     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.3833     Document Type: Article

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