Optical, morphological, structural, electrical, molecular orientation, and electroluminescence characteristics of organic semiconductor films prepared at various deposition rates

Thin Solid Films

Volumn 520, Issue 6, 2012, Pages 2283-2288

  Matsushima, Toshinori ^a   Shiomura, Koutaro ^a   Naka, Shigeki ^b   Murata, Hideyuki ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b UNIVERSITY OF TOYAMA   (Japan)

Author keywords

Alpha NPD; Carrier mobility; High deposition rate; Organic light emitting diodes; Photoluminescence quantum yield; Tris(8 hydroxyquinoline)aluminum

Indexed keywords

ALPHA-NPD; ATOMIC FORCE MICROSCOPE IMAGES; CHARGE BALANCE FACTOR; ELECTRON CURRENTS; ELECTRONIC TRANSITION MOMENTS; EXTERNAL QUANTUM EFFICIENCY; HIGH DEPOSITION RATE; HIGH DEPOSITION RATES; HOLE CURRENT; ORGANIC SEMICONDUCTOR FILMS; PARALLEL ORIENTATION; PHOTOLUMINESCENCE QUANTUM YIELD; PHOTOLUMINESCENCE SPECTRUM; PL LIFETIME; PL QUANTUM YIELD; RADIATIVE DECAY RATES; THREE ORDERS OF MAGNITUDE; TIME-OF-FLIGHT TECHNIQUES; TRIS(8-HYDROXYQUINOLINE)ALUMINUM; ULTRAVIOLET-VISIBLE ABSORPTION SPECTRUM;

ALUMINUM; ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; CARRIER MOBILITY; DECAY (ORGANIC); DEPOSITION; DEPOSITION RATES; LIGHT; LIGHT EMISSION; MOLECULAR ORIENTATION; NAPHTHALENE; ORGANIC LIGHT EMITTING DIODES (OLED); PHOTOLUMINESCENCE; PRODUCT DEVELOPMENT; QUANTUM YIELD; SEMICONDUCTOR DIODES; X RAY DIFFRACTION;

HOLE MOBILITY;

EID: 84855964211     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.09.060     Document Type: Article

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